• J. Moseley, M.M. Al-Jassim, H.R. Moutinho, H.L. Guthrey, W.K. Metzger, R.K. Ahrenkiel, "Explanation of red spectral shifts at CdTe grain boundaries", Applied Physics Letters (2013, in press).

  • M. R. Bergen, B. J. Simonds, B. Yan, G. Yue, R. K. Ahrenkiel, T. E. Furtak, R. T. Collins, P. C. Taylor, and M. C. Beard, "Electron transfer in hydrogenated nanocrystalline silicon observed by time-resolved terahertz spectroscopy", Phys. Rev. B 87, 081301(R) (2013) Richard K Ahrenkiel, "Resonant Coupling For Contactless Measurement of Carrier Lifetime", J. Vac. Sci. Technol. B 31, 04D113 - 04D113-8 (2013)

  • Darius Kuciauskas, Ana Kanevce, Joel N. Duenow, Ramesh Dhere, David S. Albin, Dean H. Levi, and Richard K. Ahrenkiel, "Minority Carrier Lifetime Analysis in the Bulk of Thin Film Absorbers Using Sub-bandgap (Two-Photon) Excitation", IEEE Journal of Photovoltaics 3, 1319-1324 (2013).

  • Ari Feldman, Richard Ahrenkiel, and John Lehman, "Degradation of Photovoltaic Devices at High Concentration by Space Charge Limited Currents", Solar Energy Materials and Solar Cells 117, pp. 408–411 (2013).

  • Ari Feldman, Richard Ahrenkiel, and John Lehman, "Transient mobility in silicon as seen by a combination of free-carrier absorption and resonance-coupled photoconductive decay", J. Appl. Phys. 112, 103703 (2013).

  • R. K. Ahrenkiel, A. Feldman, J. Lehman, and S. W. Johnston, "Novel Free-Carrier Pump-Probe Analysis of Carrier Transport in Semiconductors", IEEE Journal of Photovoltaics 3. Pp. 348-352 (2013).

  • R. K. Ahrenkiel and D. J. Dunlavy, "A new lifetime diagnostic system for photovoltaic materials", Solar Energy Materials and Solar Cells, 95 (2011), 1985-1989.

  • R.K. Ahrenkiel, N. Call, S.W. Johnston, W.K. Metzger, "Comparison of techniques for measuring carrier lifetime in thin-film and multicrystalline photovoltaic materials", Solar Energy Materials and Solar Cells 95 (2010), 2197-2204.

  • A. D Feldman and R. K. Ahrenkiel, "Space charge limited current effect on photoconductive decay in silicon at high injection levels", 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), p 001374-9, 2010

  • B. J. Simonds, B. Yan, G. Yue, R. K. Ahrenkiel and P. C. Taylor, "Generation rate dependence of carrier lifetime measurements in nanocrystalline silicon using transmission modulated photoconductive decay", 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), p 003743-7, 2010.

  • Q. Shang, W. Seaman, M. Whitnery, M. George, J. Madocks, and R. Ahrenkiel, "N-type and P-type C-SI surface passivation by remote PECVD AlOx for solar cells", 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), p 003141-4, 2010

  • R. K. Ahrenkiel, D. J. Dunlavy, and B. Simonds, "A new lifetime diagnostic system for photovoltaic materials", 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), p 000842-6, 2010

  • A. D Feldman and R. K. Ahrenkiel, "Space charge limited current effect on photoconductive decay in silicon at high injection levels", 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), p 001374-9, 2010

  • B. J. Simonds, B. Yan, G. Yue, R. K. Ahrenkiel and P. C. Taylor, "Generation rate dependence of carrier lifetime measurements in nanocrystalline silicon using transmission modulated photoconductive decay", 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), p 003743-7, 2010.

  • Q. Shang, W. Seaman, M. Whitnery, M. George, J. Madocks, and R. Ahrenkiel, "N-type and P-type C-SI surface passivation by remote PECVD AlOx for solar cells", 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), p 003141-4, 2010

  • G. M. Berman, N. J. Call, R. K. Ahrenkiel, and S. W. Johnston, "Evaluation of Four Imaging Techniques for the Electrical Characterization of Solar Cells", Symposium Proceedings. Photovoltaic Materials and Manufacturing Issues, p 151-6, 2009

  • R. K. Ahrenkiel, A. Feldman, M. George, and H. Chandra, "Recombination velocity of SiNx:H/silicon interfaces and the relationship of insulator charge", Proceedings of the 2009 34th IEEE Photovoltaic Specialists Conference (PVSC 2009), p 001054-9, 2009

  • R. K. Ahrenkiel and S. W. Johnston, "An optical technique for measuring surface recombination velocity", Solar Energy Materials and Solar Cells 93 (2009), 645-649.

  • R. K. Ahrenkiel, "Photoconductive analysis of ion implantation damage and annealing in silicon wafers". J. Vac. Sci. Technol. A 26, pp. 812-818 (2008).

  • N. J. Call, S. W. Johnston, R. K. Ahrenkiel, M. J. Romero, and B. Yang, "Imaging of shunts and junction breakdown in multicrystalline silicon solar cells", Proceedings of the 2009 34th IEEE Photovoltaic Specialists Conference (PVSC 2009).

  • S. Kohli, J. A. Theil, P.R. McCurdy,…. R. K. Ahrenkiel, "Spectroscopic ellipsometry and photoluminescence measurements of as-depositied and annealed silicon rich oxynitride films", Thin Solid Films, 516, pp. 4342-4350 (2008).

  • S. P. Ahrenkiel, M. W. Wanlass, J. J. Carapella, R. K. Ahrenkiel, S. W. Johnston, and L. M. Gedvilas, "Optimization of buffer layers for lattice-mismatched epitaxy of Ga(x)In(1-x)As/InAs(y) P(1-y) double-heterostructures on InP", Solar Energy Materials and Solar Cells, 91, pp 908-918 (2007).

  • R. K. Ahrenkiel, P. Dippo, M. Page, and W. Metzger, "Comparison of silicon photoluminescence and photoconductive decay for material quality characterization", Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II, p 163-8, April 2007.

  • Steven Johnston, Richard Ahrenkiel, Pat Dippo, Matt Page, and Wyatt Metzger, "Comparison of Silicon Photoluminescence and Photoconductive Decay for Material Quality Characterization", Mater. Res. Soc. Symp. Proc. Vol. 994 © 2007 Materials Research Society0994-F07-04.

  • R. K. Ahrenkiel and S. W. Johnston, "Interaction of microwaves with photoelectrons in semiconductors", Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), v 26, n 4, p 1508-15, July 2008

  • B. J. Simonds, B. Yan, G. Yue, D. J. Dunlavy, R. K. Ahrenkiel, and P. C. Taylor, "Measure of carrier lifetime in nanocrystalline silicon thin films using transmission modulated photoconductive decay", Mater. Res. Soc. Symp. Proc., Vol. 1245 © 2010 Materials Research Society.

  • R. K. Ahrenkiel, S. W. Johnston, and W. K. Metzger, "Comparison of Techniques for Measuring Recombination Lifetime in Photovoltaic Materials: Trapping Effects", Mater. Res. Soc. Symp. Proc. Vol. 974 © 2007 Materials Research Society.

  • G.M. Berman, N. J. Call, R. K. Ahrenkiel, and S. W. Johnston, "Evaluation of Four Imaging Techniques for the Electrical Characterization of Solar Cells", Mater. Res. Soc. Symp. Proc. Vol. 1123 © 2009 Materials Research Society.

  • R. K. Ahrenkiel, A. Feldman, J. Lehman, and S. W. Johnston, "Novel Free-Carrier Pump-Probe Analysis of Carrier Transport in Semiconductors", IEEE Journal of Photovoltaics 3. pp. 348-352 (2013).

  • R. K. Ahrenkiel and D. J. Dunlavy, "A new lifetime diagnostic system for photovoltaic materials", Solar Energy Materials and Solar Cells, 95 (2011), 1985-1989.

  • G. M. Berman, N. J. Call, R. K. Ahrenkiel, and S. W. Johnston, "Evaluation of Four Imaging Techniques for the Electrical Characterization of Solar Cells", Symposium Proceedings. Photovoltaic Materials and Manufacturing Issues, p 151-6, 2009.

  • R. K. Ahrenkiel, A. Feldman, M. George, and H. Chandra, "Recombination velocity of SiNx:H/silicon interfaces and the relationship of insulator charge", Proceedings of the 2009 34th IEEE Photovoltaic Specialists Conference (PVSC 2009), p 001054-9, 2009

  • R. K. Ahrenkiel, "Photoconductive analysis of ion implantation damage and annealing in silicon wafers". J. Vac. Sci. Technol. A 26, pp. 812-818 (2008).

  • N. J. Call, S. W. Johnston, B. Phan, and R. K. Ahrenkiel, "Applications of imaging techniques for solar cell characterization" Proceedings of the 2009 34th IEEE Photovoltaic Specialists Conference (PVSC 2009).

  • N. J. Call, S. W. Johnston, R. K. Ahrenkiel, M. J. Romero, and B. Yang, "Imaging of shunts and junction breakdown in multicrystalline silicon solar cells", Proceedings of the 2009 34th IEEE Photovoltaic Specialists Conference (PVSC 2009).

  • S. Kohli, J. A. Theil, P.R. McCurdy,…. R. K. Ahrenkiel, "Spectroscopic ellipsometry and photoluminescence measurements of as-depositied and annealed silicon rich oxynitride films", Thin Solid Films, 516, pp. 4342-4350 (2008).

  • S. P. Ahrenkiel, M. W. Wanlass, J. J. Carapella, R. K. Ahrenkiel, S. W. Johnston, and L. M. Gedvilas, "Optimization of buffer layers for lattice-mismatched epitaxy of Ga(x)In(1-x)As/InAs(y) P(1-y) double-heterostructures on InP", Solar Energy Materials and Solar Cells, 91, pp 908-918 (2007).

  • R. K. Ahrenkiel, P. Dippo, M. Page, and W. Metzger, "Comparison of silicon photoluminescence and photoconductive decay for material quality characterization", Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II, p 163-8, April 2007.

  • R. K. Ahrenkiel and S. W. Johnston, "Interaction of microwaves with photoelectrons in semiconductors", Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), v 26, n 4, p 1508-15, July 2008

  • B. J. Simonds, B. Yan, G. Yue, D. J. Dunlavy, R. K. Ahrenkiel, and P. C. Taylor, "Measure of carrier lifetime in nanocrystalline silicon thin films using transmission modulated photoconductive decay", Mater. Res. Soc. Symp. Proc., Vol. 1245 © 2010 Materials Research Society.

  • R. K. Ahrenkiel and D. J. Dunlavy, "A new lifetime diagnostic system for photovoltaic materials", Solar Energy Materials and Solar Cells, 95 (2011), 1985-1989.

  • R.K. Ahrenkiel, N. Call, S.W. Johnston, W.K. Metzger, "Comparison of techniques for measuring carrier lifetime in thin-film and multicrystalline photovoltaic materials", Solar Energy Materials and Solar Cells 95 (2010), 2197-2204.

  • A. D Feldman and R. K. Ahrenkiel, "Space charge limited current effect on photoconductive decay in silicon at high injection levels", 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), p 001374-9, 2010

  • B. J. Simonds, B. Yan, G. Yue, R. K. Ahrenkiel and P. C. Taylor, "Generation rate dependence of carrier lifetime measurements in nanocrystalline silicon using transmission modulated photoconductive decay", 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), p 003743-7, 2010.

  • Q. Shang, W. Seaman, M. Whitnery, M. George, J. Madocks, and R. Ahrenkiel, "N-type and P-type C-SI surface passivation by remote PECVD AlOx for solar cells", 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), p 003141-4, 2010

  • R. K. Ahrenkiel, D. J. Dunlavy, and B. Simonds, "A new lifetime diagnostic system for photovoltaic materials", 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), p 000842-6, 2010

  • G. M. Berman, N. J. Call, R. K. Ahrenkiel, and S. W. Johnston, "Evaluation of Four Imaging Techniques for the Electrical Characterization of Solar Cells", Symposium Proceedings. Photovoltaic Materials and Manufacturing Issues, p 151-6, 2009

  • R. K. Ahrenkiel, A. Feldman, M. George, and H. Chandra, "Recombination velocity of SiNx:H/silicon interfaces and the relationship of insulator charge", Proceedings of the 2009 34th IEEE Photovoltaic Specialists Conference (PVSC 2009), p 001054-9, 2009

  • R. K. Ahrenkiel and S. W. Johnston, "An optical technique for measuring surface recombination velocity", Solar Energy Materials and Solar Cells 93 (2009), 645-649.

  • R. K. Ahrenkiel, "Photoconductive analysis of ion implantation damage and annealing in silicon wafers". J. Vac. Sci. Technol. A 26, pp. 812-818 (2008).

  • N. J. Call, S. W. Johnston, B. Phan, and R. K. Ahrenkiel, "Applications of imaging techniques for solar cell characterization" Proceedings of the 2009 34th IEEE Photovoltaic Specialists Conference (PVSC 2009).

  • N. J. Call, S. W. Johnston, R. K. Ahrenkiel, M. J. Romero, and B. Yang, "Imaging of shunts and junction breakdown in multicrystalline silicon solar cells", Proceedings of the 2009 34th IEEE Photovoltaic Specialists Conference (PVSC 2009).

  • S. Kohli, J. A. Theil, P.R. McCurdy, R. K. Ahrenkiel, "Spectroscopic ellipsometry and photoluminescence measurements of as-depositied and annealed silicon rich oxynitride films", Thin Solid Films, 516, pp. 4342-4350 (2008).

  • S. P. Ahrenkiel, M. W. Wanlass, J. J. Carapella, R. K. Ahrenkiel, S. W. Johnston, and L. M. Gedvilas, "Optimization of buffer layers for lattice-mismatched epitaxy of Ga(x)In(1-x)As/InAs(y) P(1-y) double-heterostructures on InP", Solar Energy Materials and Solar Cells, 91, pp 908-918 (2007).

  • R. K. Ahrenkiel, P. Dippo, M. Page, and W. Metzger, "Comparison of silicon photoluminescence and photoconductive decay for material quality characterization", Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II, p 163-8, April 2007.

  • R. K. Ahrenkiel and S. W. Johnston, "Interaction of microwaves with photoelectrons in semiconductors", Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), v 26, n 4, p 1508-15, July 2008

  • B. J. Simonds, B. Yan, G. Yue, D. J. Dunlavy, R. K. Ahrenkiel, and P. C. Taylor, "Measure of carrier lifetime in nanocrystalline silicon thin films using transmission modulated photoconductive decay", Mater. Res. Soc. Symp. Proc., Vol. 1245 © 2010 Materials Research Society.

  • R. K. Ahrenkiel and S. W. Johnston, "An Optical Technique for Measuring Surface Recombination Velocity", Solar Energy Materials and Solar Cells 93, 645-640 (2009).

  • Steve Johnston, Thomas Unold, Ingrid Repins, Rajalakshmi Sundaramoorthy, Kim M. Jones, Bobby To, Nathan Call, and Richard Ahrenkiel, "Imaging Characterization Techniques Applied to Cu(In,Ga)Se2 Solar Cells", Journal of Vacuum Science and Technology, A28, 665 (2010).

  • Nathan J. Call,Steven W. Johnston, Richard K. Ahrenkiel, Manuel J. Romero, and Bobby Yang, "Imaging of Shunts and Junction Breakdown in Multicrystalline Silicon Solar Cells", Proceedings of the 34th IEEE Photovoltaic Specialists Conference, pp. 1184-1189 (2009).

  • Richard K Ahrenkiel, Ari Feldman, Mark George, Haripin Chandra, "Recombination Velocity of SiN:H/Silicon Interfaces and the Relationship of Insulator Charge", Proceedings of the 34th IEEE Photovoltaic Specialists Conference, pp. 1054-1059 (2009).

  • Steven W. Johnston, Nathan J. Call, Bill Phan, and Richard K. Ahrenkiel, "APPLICATIONS OF IMAGING TECHNIQUES FOR SOLAR CELL CHARACTERIZATION", Proceedings of the 34th IEEE Photovoltaic Specialists Conference pp. 276-281, (2009).

  • R. K. Ahrenkiel, "Photoconductive analysis of ion implantation damage and annealing in silicon wafers". J. Vac. Sci. Technol. A 26, pp. 812-818 (2008).

  • R. K. Ahrenkiel and S. W. Johnston, "Lifetime analysis of silicon solar cells by microwave reflection, Solar Energy Materials and Solar Cells, 92, pp. 830-838 (2008).

  • R. K. Ahrenkiel, S. W. Johnston, W. K. Metzger, and P. Dippo, "Relationship of Band-Edge Luminescence to Recombination Lifetime in Silicon Wafers", Journ. Of Electronic Materials 37 pp. 396-402 (2008).

  • S. Kohli, J. A. Theil, P.R. McCurdy and R. K. Ahrenkiel, "Spectroscopic ellipsometry and photoluminescence measurements of as-depositied and annealed silicon rich oxynitride films", Thin Solid Films, 516, pp. 4342-4350 (2008).

  • S. P. Ahrenkiel, M. W. Wanlass, J. J. Carapella, R. K. Ahrenkiel, S. W. Johnston, and L. M. Gedvilas, "Optimization of buffer layers for lattice-mismatched epitaxy of Ga(x)In(1-x)As/InAs(y) P(1-y) double-heterostructures on InP", Solar Energy Materials and Solar Cells, 91, pp 908-918 (2007).

  • M. S. Mason, C. E. Richardson, H. A. Atwater, and R. K. Ahrenkiel, "Microsecond minority carrier lifetimes in HWCVD-grown films and implications for thin film solar cells", Thin Solid Films, 501, 288 (2006).

  • Richard K Ahrenkiel, Steven W. Johnston, and Wyatt K Metzger, "Comparison of Techniques for Measuring Recombination Lifetime in Photovoltaic Materials: Trapping Effects", Mat. Res. Soc. Fall 2006 Symposium

  • S. Johnston, R. K. Ahrenkiel, S.Bhunia, and D. N. Bose, "Temperature and wavelength dependence of transient photoconductivity in ZnTe", Indian J. Phys. 80, 703-706 (2006).

  • J. M. Luther, S. W. Johnston, S. R. Kurtz, R. K. Ahrenkiel, and R. T. Collins, "Temperature-dependent dark current measurements in GaAsN heterojunction diodes", Appl. Phys. Lett. 88, 263502 (2006).

  • S. W. Johnston, S. R. Kurtz, D. J. Friedman, A. J. Ptak, R. K. Ahrenkiel, and R. S. Crandall, "Observed trapping of minority-carrier electrons in p-type GaAsN during deep-level transient spectroscopy measurement", Appl. Phys. Lett. 86, 072109 (2005).

  • Y. Lin, M. K. Hudait, S. W. Johnston, R. K. Ahrenkiel, and S. A. Ringel, "Photoconductivity decay in metamorphic InAsP/InGaAs double heterostructures grown on In As(y)P(1-y) compositionally step-graded buffers", Appl .Phys. Lett. 86, 071908 (2005).

  • R. K. Ahrenkiel S. W. Johnston, J. D. Webb, L. M. Gedvilas, J. J. Carapella, and M. W. Wanlass, "Recombination lifetimes in undoped, low-band gap InAs(y)P(1-y)/In(x)Ga(1-x)As double heterostructures grown on InP substrates", Appl. Phys. Lett. 78, 1092 (2001).

  • S. W. Johnston, S. R. Kurtz, D. J. Friedman, A. J. Ptak, R. K. Ahrenkiel, and R. S. Crandall, "Observed trapping of minority-carrier electrons in p-type GaAsN during deep-level transient spectroscopy measurement", Appl. Phys. Lett. 86, 072109 (2005).

  • M. W. Wanlass, S. P. Ahrenkiel, R. K. Ahrenkiel, D. S. Albin, J. J. Carapella, A. Duda, J. F. Geisz, S. Kurtz, T. Moriarty, R. J. Wehrer, and B. Wernsman, "LATTICE-MISMATCHED APPROACHES FOR HIGH-PERFORMANCE, III-V PHOTOVOLTAIC ENERGY CONVERTERS" , Proceedings of the 31th IEEE Photovoltaic Specialists Conference, pp. 530-535 (2005).

  • Richard K Ahrenkiel , Wyatt K Metzger, Matthew Page, Robert Reedy, Joseph Luther, and Jamiyana Dashdorj, "Relationship of Recombination Lifetime to Dark Current In Silicon p-n Junctions, ", Proceedings of the 31th IEEE Photovoltaic Specialists Conference pp. 895-898 (2005).

  • Hojun Yoon, Kenneth M. Edmondson, Geoffrey S. Kinsey, Richard R. King, Peter Hebert, Richard K. Ahrenkiel*, B.T. Cavicchi, and Nasser H. Karam, "MINORITY CARRIER LIFETIME AND RADIATION DAMAGE COEFFICIENTS OF GERMANIUM", Proceedings of the 31th IEEE Photovoltaic Specialists Conference, pp. 842-845 (2005).

  • W. K. Metzger, R. K. Ahrenkiel, J. Dashdorj, and D. F. Friedman, "Analysis of charge separation dynamics in a semiconductor junction" Phys. Rev. B 71, 035301(2005).

  • S. Kohli, J.A. Theil, P. C. Dippo, K. M. Jones, M.M. Al-Jassim, R. K. Ahrenkiel, C. D. Rithner, and P. K. Dorhout, "Nanocrystal formation in annealed a-Si0.17N0.07:H films", Nanotechnology 15, 1831 (2004).

  • R. K. Ahrenkiel and J. Dashdorj, "Interface Recombination Velocity Measurement by a Contactless Microwave Teckhnique", J. Vacuum Science and Technology B22, 2063 (2004).

  • S. P. Ahrenkiel. M. W. Wanlass, J. J. Carapella, L. M. Gedvilas, B. M. Keyes, R. K. Ahrenkiel, H. R. Moutinho, "Characterization survey of Ga(x)In(1-x)As/InAs(y)P(1-y) double heterostructures and InAs(y)P(1-y) multilayers grown on InP, Journ. of Electronic Materials 33, 185 (2004).

  • R. K. Ahrenkiel, W. Metzger, and D. F. Friedman, "Transport Properties of Ordered-GaInP/GaAs Heterostructures", Appl. Phys Lett. 85, 1733 (2004).

  • S. Kohli, J. A. Theil, P. Dippo, and R. K. Ahrenkiel, "Chemical, Optical, Vibrational, and Luminescent Properties of Hydrogenated Silicon-Rich Oxynitrude Films", Thin Solid Films 473 (1), 89 (2005).

  • D.H. Levi, C.W. Teplin, E. Iwaniczko, R.K. Ahrenkiel, T.H. Wang, M.R. Page, K. Jones, Q. Wang, and H.M. Branz, "Materials and Interface Optimization of Heterojunction Silicon (HIT) Solar Cells Using in-situ Real-Time Spectroscopic Ellipsometry Mat. Res. Soc. Symp. Proc. Vol. 808, A8.3.1 (2004).

  • R. K. Ahrenkiel and J. Dashdorj "Interface Recombination Velocity Measurement By A Contactless Microwave Technique", European Physical Journal:Applied Physics 27, 499 (2004).

  • Jamiyanaa Dashdorj, Richard Ahrenkiel, and Wyatt Metzger, "Modeling of recombination lifetimes in charge-separation device structures", Mat. Res. Soc. Symp. Proc. Vol. 799, Z4.5.1 (2004).

  • R.K. Ahrenkiel, D. Friedman, W. K. Metzger, M. Page, and J. Dashdorj "Observation of Retarded Recombination in Charge-Separation Structures", Mat. Res. Soc. Symp. Proc. Vol. 799, Z4.6.1 (2004).

  • A. M. Hermann, A. Madan, M. W. Wanlass, V. Badri, R. Ahrenkiel, S. Morrison, and C. Gonzales, "MOCVD growth and properties of Zn3P2 and Cd3P2 films for thermal photovoltaic applications", Solar Energy Materials and Solar Cells 82, 241 (2004).

  • R. P. King, C. M. Tegzer, P. C. Colter, K. M. Edmondson, C. C. Law, A. P. Stavrides, H. Yoon, G. S. Kinsey, H. L. Cotal J. H. Ermer R. A Sherif, K. Emery, W. Metgzer, and R. K. Ahrenkiel, and N. H. Karam; "Lattice-matched and metamorphic GaInP/GaInAs/Ge Concentrator Solar Cells", Proceedings of 3rd World Conference on Photovoltaic Energy Conversion, 1, 622-5 (2003).

  • J. A. AbuShama, S. Johnston, R. Ahrenkiel, R. Crandall, D. Young, and R. Nufi, MRS Proceedings 763 255-60 (2003).

  • R. K. Ahrenkiel and S. W. Johnston, Materials Science and Engineering B102, 161-172 (2003); "An advanced technique for measuring minority-carrier parameters and defect properties of semiconductors"

  • Metzger, W.K.; Albin, D.; Levi, D.; Sheldon, P.; Li, X.; Keyes, B.M.; Ahrenkiel, R.K. Journ Appl. Phys. 943549-55, (2003), "Time-resolved photoluminescence studies of CdTe solar cells".

  • Johnston, S.W.; Ahrenkiel, R.K.; Tu, C.W.; Hong, Y.G., "Measurement of charge separation potentials in GaAs1-xAsx", Journal of Vacuum Science & Technology A21,1765-9 (2003),

  • A. Balcioglu, R. K. Ahrenkiel and D. J. Friedman, "Effects of Oxygen Contamination on Diffusion Length in p+-n GaInNAs Solar Cells", Journ. Appl. Phys., 93, 3635-42 (2003).

  • S. W. Johnston, R. K. Ahrenkiel, D. J. Friedman, and S. R. Kurtz, "Deep-level Transient Spectroscopy in InGaAsN Lattice-matched to GaAs", Proceedings of the 29the Photovoltaic Specialists Conference, Twenty-Ninth IEEE Photovoltaic Specialists Conference 2002, 1023 (2002).

  • R. K. Ahrenkiel and B. Lojek entitled "Analysis of Ion Implantation Damage in Silicon Wafers by a Contactless Microwave Diagnostic", Mat. Res. Soc. Symp. Proc. Vol. 699, 201( 2002).

  • W. K. Metzger, M. W. Wanlass, L.. M. Gedvilas, J. C. Verley, J. J. Carapella, and R. K. Ahrenkiel, "Effective electron mass and plasma filter characterization of n-type InGaAs and InAsP", Journ. Appl. Phys. 92, 3524 (2002).

  • W. K. Metzger, M. W. Wanlass, R. J. Ellingson, R. K . Ahrenkiel, J. J. Carapella, "Auger recombination in low-bandgap n-InGaAs" Appl. Phys. Lett., 79, 3272 (2001)

  • R. K. Ahrenkiel "RECOMBINATION PROCESSES AND LIFETIME MEASUREMENTS IN SILICON PHOTOVOLTAICS", Solar Energy Materials and Solar Cells 76. 243 (2003).

  • R. K. Ahrenkiel, R. Ellingson, W. Metzger, D. K. . Lubyshev, and W. K. Liu, "Auger Recombination in Heavily Cardon-doped GaAs", Appl. Phys. Lett. 26, 1879 (2001).

  • R. K. Ahrenkiel, S. W. Johnston, J. D. Webb, L. M. Gedvilas, J. J. Carapella, and M. W. Wanlass, "Recombination lifetimes in undoped, low-band gap InAsyP1-y/InxGa1-xAs double heterostructures grown on InP substrates", Appl. Phys. Lett. 78. 1092 (2001).

  • R. K. Ahrenkiel, S. W. Johnston, B. M. Keyes, D. J. Friedman, and S. M. Vernon, "Transport properties of GaAs(1-x)N(X) thin films grown by metalorganic chemical vapor deposition", Appl. Phys. Lett. 77, 3794 (2000).

  • R. K. Ahrenkiel and S. W. Johnston, "Injection Level Spectroscopy of Impurities in Silicon" , Surface Engineering 16,54 (2000).

  • R. K. Ahrenkiel, W. W. Johnston, L. M. Gedvilas, J. D. Webb, and J. C. Bisaillom, "Role of Oxygen Precipitates on the Performance of Crystalline Silicon-based Photovoltaic Devices", pp. 252-255, TWENTIETH EIGHTH PHOTOVOLTAIC SPECIALISTS CONFERENCE-2000, IEEE Press (2001).

  • T. H. Wang, T. F. Ciszek, M. Page, Y. Yan, R. Bauer, Q. Wang, J. Casey, R. Reedy, R. Matson, and M. M. Al-Jassim, "Material Properties of Polysilicon Layers Deposited by Atmospheric Pressure Iodine Vapor Transport", pp. 138-141, TWENTIETH EIGHTH PHOTOVOLTAIC SPECIALISTS CONFERENCE-2000, IEEE Press (2001).

  • Balcioglu, A.; Ahrenkiel, R.K.; Hasoon, F,."Deep-level impurities in CdTe/CdS thin-film solar cells," Journal of Applied Physics; 15 Dec. 2000; vol.88, no.12, p.7175-8

  • Balcioglu, A.; Ahrenkiel, R.K.; Friedman, D.J. "Evidence of an oxygen recombination center in p+-n GaInNAs solar cells", Applied Physics Letters 24, April 2000; vol.76, no.17, p.2397-9

  • B. Lojek, M. Whiteman, and R. Ahrenkiel, "Athermal annealing of ion-implanted Silicon" 9th International Conference on Advanced Thermal Processing of Semiconductors. RTP 2001, 125-31 (2001).

  • Ahrenkiel, R.K.; Mascarenhas, A.; Johnston, S.W.; Zhang, Y.; Friedman, D.J.; Vernon, S.M., "Photoconductive properties of GaAs( 1-x)N( x) double heterostructures as a function of excitation wavelength, Conference: Infrared Applications of Semiconductors III. Symposium, 29 Nov.-2 Dec. 1999, Boston, MA, USA

  • D. N. Bose, R. K. Ahrenkiel and S. Bhunia, "Steady-State and Time-Resolved Photoconductivitity Measurements of Minority Carrier Lifetime in ZnTe", J. Appl. Phys. 86, 6599 (1999).

  • S. W. Johnston and R. K. Ahrenkiel, "Measurement of the temperature-dependent recombination lifetimes in photovoltaic materiasl, 15th NCPC Photovoltaics Program Review (Denver, CO, USA, 1999), pp. 505-510.

  • S. P. Ahrenkiel, S. W. Johnston, R. K. Ahrenkiel, D. J Arent, M. C. Hanna, and M. W. Wanlass, "Atomic Ordering and Temperature-Dependent Transient Photoconductivity in Ga0.47In0.53As". Appl. Phys. Lett. 74, 3534, (1999).

  • R. K. Ahrenkiel, R. Ellingson, S. Johnston, J. Webb, J. Carapella, and M. Wanlass, "Recombination Lifetime of InxGa1-xAs Alloys Used in Thermophotovoltaic Converters", AIP Conference Proceedings 460, p. 282, (1999).

  • R. K. Ahrenkiel and S. Johnston, "Contactless measurement of recombination lifetime in photovoltaic materials", Solar Energy Materials and Solar Cells 55, 59 (1998).

  • D.H. Levi, L.M. Woods, D.S. Albin, T.A. Gessert, R.C. Reedy, R.K. Ahrenkiel, "The Influence of Grain Boundary Diffusion on the Electro-Optical Properties of CdTe/CdS Solar Cells" Proceedings of the 2nd World Conference on Photovoltaic Solar Energy Conversion, pp. 1047-1050 (1998)

  • R. R. King, J. H. Ermer, D. E. Joslin, M. Haddad, J. Elredge, L. Cai, N. H. Karam, B. Keyes and R. K. Ahrenkiel, "Double heterostructures for characterization of bulk lifetime and interface recombination velocity ion III-V multijunction solar cells", Proceedings of the 2nd World Conference on Photovoltaic SolarEnergy Conversion- 1998, pp. 86-90, (1998).

  • S. Johnston and R. K. Ahrenkiel, "Measurement of the temperature dependence of silicon recombination lifetimes", Mat. Res. Soc. Symp Proc. V. 510, 607 (1998).

  • R. K. Ahrenkiel, R. Ellingson, S. Johnston, and M. Wanlass, "Recombination lifetime of In(0.53)Ga(0.47)As as a function of doping density", Appl. Phys. Lett. 72, 3470 (1998).

  • R. Venkatasubramanian, B. O'Quinn, J. Hills, D. Malta, M. L. Timmons, J. A. Hutchby, R. Ahrenkiel, and B. M. Keyes, "Development of high-efficiency GaAs solar cells on polycrystalline Ge substrates", AIP Conference Proceedings 353, pp. 558-568 (1996).

  • R. K. Ahrenkiel and S. Johnston, "Injection-Level Spectroscopy of Metal Impurities in Silicon", Mat. Res. Soc. Symp. Proc. Vol. 510, 575 (1998).

  • L.M. Woods, D.H. Levi, V. Kaydanov, G.Y. Robinson, R.K. Ahrenkiel, "Electrical Characterization of Etched Grain-Boundary Properties from As-Processed CdTe-Based Solar Cells", AIP Conference Proceedings 462, p. 499, (1999).

  • W. Song, D. Mao, V. Kaydanov, T. Ohno, J. U. Trefny, R. K. Ahrenkiel, D. H. Levi, S. Johnston, and B. E. McCandless, "Effect and optimization of CdS/CdTe interdiffusion on CdTe electrical properties and CdS/CdTe Cell performance", AIP Conference Proceedings 462, p.194, (1999).

  • W. Song, D. Mao, V. Kaydanov, T. Ohno, J. U. Trefny, R. K. Ahrenkiel, D. H. Levi, and S. Johnston, "Influence of CdCl2 treatment on the electrical and Optical Properties of CdS thin films", AIP Conference Proceedings 462, p.188, (1999).

  • S. Johnston and R. K. Ahrenkiel, "Measurement of the temperature-Dependent Recombination Lifetimes in Photovoltaic Materials", AIP Conference Proceedings 462, p. 505, (1999).

  • R. K. Ahrenkiel and S. W. Johnston, "Large-signal injection-level spectroscopy of impurities in silicon" AIP Conference Proceedings, AIP Conference Proceedings 462, p. 483, (1999).

  • R. Venkatasubramaniam, E. Siivola, B. O'Quinn, B. Keyes, and R. Ahrenkiel, "Pathways to High-Efficiency gaAs Solar Cells on Low-Cost Substrates", AIP Conference Proceedings 404, pp. 411-418 (1997).

  • Levi, D.H.; Woods, L.M.; Albin, D.S.; Gessert, T.A.; Niles, D.W.; Swartzlander, A.; Rose, D.H.; Ahrenkiel, R.K.; Sheldon, P., "Effects of back contact treatments on junction photoluminescence in CdTe/CdS solar cells," Mat. Res. Soc. Symp. Vol. 485, pp.209-214 (1998).

  • R. Venkatasubramanian, B. C. O'Quinn, J. S. Hills, M. L. Timmons, D. P. Malta, B. Keyes, and R. Ahrenkiel, "Development of high-performance GaAs solar cells on large-grain polycrystalline Ge substrates", Mat. Res. Soc. Symp Proc. V. p.483-8, Mater. Res. Soc; Pittsburgh, PA, (1997).

  • M.H. Aslan, W. Song, J. Tang, D. Mao, R.T. Collins, D.H. Levi, R.K. Ahrenkiel, S.C. Lindstrom, and M.B. Johnson, "Sulfur Diffusion in Polycrystalline Thin-Film CdTe Solar Cells", Mat. Res. Soc. Symp Proc.V.. 1997, pp. 203-8, (1998), AIP Press

  • W. A. Doolittle, A. Rohatgi, R. K. Ahrenkiel, D. Levi, G. Augustine, and R. Hopkins, "Understanding the role of defects in limiting the minority-carrier lifetime in SiC", Mat. Res. Soc. Symp Proc. V. 483, pp. 197-202, (1998).

  • R. K. Ahrenkiel, S. P. Ahrenkiel, D. J. Arent, and J. M. Olson, "Carrier transport in ordered and disordered In(0.53)Ga(0.47)As", Appl. Phys. Lett. 70, 756 (1997).

  • R. K. Ahrenkiel, "Carrier Recombination in Semiconductors Used for Photovoltaic Devices, AIP Conference Proceedings 394, p. 225, (1997).

  • R. K. Ahrenkiel, S. P. Ahrenkiel, D. J. Arent, J. M. Olson, and M. Wanlass, "Carrier Transport in Ordered and Disordered In(0.53)Ga(0.47)As", Mat. Res. Soc. Symp Proc. V. 441 (1997). p. 181.

  • S. P. Ahrenkiel, R. K. Ahrenkiel, and D. J. Arent, "Domain Structure and Transient Photoconductivity in Ordered Ga(0.47)In(0.53)As Epitaxial Films", Mat. Res. Soc. Symp Proc. V. 441 (1997), p. 133.

  • B. M. Keyes, R. K. Ahrenkiel, G. J. Shaw, and G. P. Summers, "Minority-carrier lifetime damage coefficient of radiation damaged InP", J. Appl. Phys. 82, 2156 (1997).

  • R. K. Ahrenkiel and S. Johnston, "Contactless measurement of recombination lifetime in photovoltaic materials", Solar Cells and Solar Energy Materials 55, p. 59-73 (1998).

  • R. K. Ahrenkiel and S. Johnston, "Contactless Measurement of Recombination Lifetime in Photovoltaic Materials", Proceedings of the 26th Photovoltaic Specialists Conference",pp. 119-122 (1998), IEEE, New York, NY.

  • R. Venkatasubramanian, B. C. O'Quinn, E. Siivolta, B. Keyes, and R. K. Ahrenkiel, "20% (AM1.5) Efficiency GaAs Solar Cells on Sub-mm Grain-Size Poly-Ge and its Transition to Low-Cost Substrates", Twenty Sixth IEEE Photovoltaic Specialists Conference-1996, pp. 811-14, IEEE, New York, NY, (1997).

  • B. Jagannathan, R. L. Wallace, W. A. Anderson, and R. K. Ahrenkiel, "Amorphous and Microcrystalline Silicon by ECR-CVD Using Highly Dilute Silane Mixtures", Proceedings of the 26th Photovoltaic Specialists Conference", pp. 675-678 (1998), IEEE, New York, NY.

  • R. K. Ahrenkiel, D. H. Levi, S. Johnston, W. Song, D. Mao, and A. Fischer, "Photoconductive Lifetime of CdS Used in Thim-Film Solar Cells", Proceedings of the 26th Photovoltaic Specialists Conference", pp. 535-8, IEEE, New York, NY, (1997).

  • R. K. Ahrenkiel, S. P. Ahrenkiel, M. M. Al-Jassim, and R. Venkatasubramanian, "Electronic and Mechanical Properties of Ge Films Grown on Glass Substrates", Proceedings of the 26th Photovoltaic Specialists Conference", pp. 527-9, IEEE, New York, NY, (1997)

  • D. H. Levi, D. S. Albin, R. K. Ahrenkiel, D. H. Rose, D. W. Niles, and P. Sheldon, "Back-Contact Effects on Junction Photoluminescence in CdTe/CdS Solar Cells", Proceedings of the 26th Photovoltaic Specialists Conference", pp. , IEEE, New York, NY, (1997).

  • F. Abulfotuh, T. Wangensteen, R. Ahrenkiel, and L. L. Kazmerski, "Optical Properties and defect levels in a surface layer found on CuInSe2 thin films", Twenty Fifth IEEE Photovoltaic Specialists Conference-1996, p. 13-17, IEEE, New York, NY, (1996).

  • D. H. Levi, H. R. Moutinho, B. M. Keyes, F. S. Hasoon, B. M. Keyes, R. K. Ahrenkiel, M. Al-Jassim, L. L. Kazmerski, and R. Birkmire, "Micro-Thorough Nanostructure Investigations of Polycrystalline CdTe: Correlations with Processing Electronic Structures", Solar Energy Materials and Solar Cells 41/42 381, (1996)

  • T. H. Wang, T. F. Ciszek, and R. K. Ahrenkiel, "Characterization of High-Purity Silicon with the Photoconductivity Decay and Photoluminescence Analysis Techniques", Proceedings of the Fourth International Symposium on High Purity Silicon, Electrochem. Soc; Pennington, NJ, pp. 462-472.

  • R. Venkatasubramanian, B. C. O'Quinn, J. S. Hills, M. L. Timmons, D. P. Malta, H. Field, R. Ahrenkiel, and B. Keyes, "18.2% (AM1.5) Efficient GaAs Solar Cell on Optical-Grade Polyscrystalline Ge Substrates", Twenty Fifth IEEE Photovoltaic Specialists Conference-1996, p. 31, IEEE, New York, NY, (1996).

  • T. F. Ciszek, T. H. Wang, R. K. Ahrenkiel, and R. Matson, "Properties of Iron-Doped Multicrystalline Silicon Grown by the Float-Zone Technique", Twenty Fifth IEEE Photovoltaic Specialists Conference-1996, p. 737, IEEE, New York, NY, (1996).

  • D. H. Levi, B. D. Fluegel, L. M. Woods, and R. K. Ahrenkiel, "Dynamics of Photoexcited Carrier Relaxation in CdTe/CdS Thin Films", Twenty Fifth IEEE Photovoltaic Specialists Conference-1996, p. 913, IEEE, New York, NY, (1996).

  • R. L. Wallace, W. A. Anderson, K. M. Jones, and R. Ahrenkiel, "Solution Grown Polysilicon for Photovoltaic Devices", Twenty Fifth IEEE Photovoltaic Specialists Conference-1996, p. 697, New York, NY, (1996).

  • H. C. Chou, A. Rohatgi, N. M. Jokerst, S. Kamra, S. R. Stock. S. L. Lowrie, R. K. Ahrenkiel, and D. H. Levi, "Approach toward high efficiency CdTe/CdS heterojunction solar cells", Materials Chemistry and Physics 43, 178 (1996).

  • R. K. Ahrenkiel, B. M. Keyes, and D. L. Levi, "Recombination Processes In Polycrystalline Photovoltaic Materials", Proceedings of the Photovoltaic Solar Energy Conference, H. S. Stephens & Associates, U.K. (1996), p. 914.

  • B. M. Keyes, J. R. Tuttle, J. R. Sites, A. L. Tennat, S. A. Asher, M. A. Contreras, K. Ramanathan, A. M. Gabor, J. Webb, R. K. Ahrenkiel, and R. Noufi, "The Influence of Ga on the Properties of CuIn(Ga)Se2-Bases Thin Films and Devices", Cryst. Res. Technol. 31, 439 (1996).

  • R. K. Ahrenkiel, S. P. Ahrenkiel, and D. J. Arent, "Recombination Lifetime in Ordered and Disordered InGaAs", AIP Conference Proceedings 358, pp. 434-445, AIP 1996..

  • R. K. Ahrenkiel, "Ultra-High Frequency Photoconductive Decay for Measuring Recombination Lifetime in Silicon", AIP Conference Proceedings 353, p161, AIP 1996.

  • R. Venkatasubramania, B. O'Quinn, J. Hills, D. Malta, M. L. Timmons, and J. A. Hutchby, R. Ahrenkiel and B. M. Keyes, "Development of High-Efficiency GaAs Solar Cells on Polycrystalline Ge Substrates", AIP Conference Proceedings 353, p558, AIP Press 1996.

  • R. K. Ahrenkiel, D. Levi, and J. Arch, "Recombination Lifetime Studies of Silicon Spheres", Solar Energy Materials and Solar Cells 41, 171, 1996, .

  • D. H. Levi, H. R. Moutinho, F. S. Hasoon, R. K. Ahrenkiel, L. L. Kazmerski, and M. M. Al-Jassim, "Correlations of Electro-Optical and Nanostructural Properties of CdTe Thin Films", AIP Conference Proceedings 353, p. 400, AIP Press 1996.

  • R. K. Ahrenkiel, S. P. Ahrenkiel, D. J. Arent, and J. M. Olson, "Carrier Transport in Ordered and Disordered In(0.53)Ga(0.47)As", Appl. Phys. Lett. 70, 756(1997).

  • B. M. Keyes, R. K. Ahrenkiel, G. J. Shaw, and G. P. Summers, "Minority-carrier lifetime of radiation damaged InP", J. Appl. Phys. 82, 2156 (1997).

  • H. C. Chou, A. Rohatgi, N. M. Jokerst, S. Kamra, S. R. Stock, S. L. Lowrie, R. K. Ahrenkiel, and D. H. Levi, "Approach toward high efficiency CdTe/CdS heterojunction solar cells", Materials Chemistry and Physics 43, 178 (1996).

  • D. H. Levi, H. R. Moutinho, B. M. Keyes, F. S. Hasoon, B. M. Keyes, R. K. Ahrenkiel, M. Al-Jassim, L. L. Kazmerski, and R. Birkmire, "Micro-Thorough Nanostructure Investigations of Polycrystalline CdTe: Correlations with Processing Electronic Structures", Solar Energy Materials and Solar Cells 41/42 383, (1996)

  • R. Venkatasubramanian, B. C. O'Quinn, J. S. Hills, M. L. Timmons, D. P. Malta, H. Field, R. Ahrenkiel, and B. Keyes, "18.2% (AM1.5) Efficient GaAs Solar Cell on Optical-Grade Polyscrystalline Ge Substrates", Twenty fifth IEEE PVSC-1996, pp. 31- 36, IEEE, New York, NY (1996).

  • T. F. Ciszek, T. H. Wang, R. K. Ahrenkiel, and R. Matson, "Properties of Iron-Doped Multicrystalline Silicon Grown by the Float-Zone TechniqueTwenty Fifth PVSC-1996, pp. 737-39, IEEE, New York, NY (1996).

  • D. H. Levi, B. D. Fluegel, L. M. Woods, and R. K. Ahrenkiel, "Dynamics of Photoexcited Carrier Relaxation in CdTe/CdS Thin Films", Twenthy Fifth PVSC-1996, pp. 737-39, IEEE, New York, NY (1996).

  • H. C. Chou, A. Rohatgi, N. M. Jokerst, S. Kamra, S. R. Stock. S. L. Lowrie, R. K. Ahrenkiel, and D. H. Levi, "Approach toward high efficiency CdTe/CdS heterojunction solar cells", Materials Chemistry and Physics 43, 178 (1996).

  • R. K. Ahrenkiel, B. M. Keyes, and D. L. Levi, "Recombination Processes In Polycrystalline Photovoltaic Materials", Proceedings of the Photovoltaic Solar Energy Conference, H. S. Stephens & Associates, U.K. (1996), p. 914.

  • B. M. Keyes, J. R. Tuttle, J. R. Sites, A. L. Tennat, S. A. Asher, M. A. Contreras, K. Ramanathan, A. M. Gabor, J. Webb, R. K. Ahrenkiel, and R. Noufi, "The Influence of Ga on the Properties of CuIn(Ga)Se2-Bases Thin Films and Devices", Cryst. Res. Technol. 31, 439 (1996).

  • R. K. Ahrenkiel, S. P. Ahrenkiel, and D. J. Arent, "Recombination Lifetime in Ordered and Disordered InGaAs", AIP Conference Proceedings 358, pp. 434-445, AIP 1996..

  • R. K. Ahrenkiel, "Ultra-High Frequency Photoconductive Decay for Measuring Recombination Lifetime in Silicon", AIP Conference Proceedings 353, p161, AIP 1996..

  • R. Venkatasubramania, B. O'Quinn, J. Hills, D. Malta, M. L. Timmons, and J. A. Hutchby, R. Ahrenkiel and B. M. Keyes, "Development of High-Efficiency GaAs Solar Cells on Polycrystalline Ge Substrates", AIP Conference Proceedings 353, p558, AIP Press 1996.

  • R. K. Ahrenkiel, D. Levi, and J. Arch, "Recombination Lifetime Studies of Silicon Spheres", Solar Energy Materials and Solar Cells 41, 171, 1996, .

  • D. H. Levi, H. R. Moutinho, F. S. Hasoon, R. K. Ahrenkiel, L. L. Kazmerski, and M. M. Al-Jassim, "Correlations of Electro-Optical and Nanostructural Properties of CdTe Thin Films", AIP Conference Proceedings 353, p. 400, AIP Press 1996.

  • R. K. Ahrenkiel, T. Wangensteen, M. M. Al-Jassim, M. Wanlass, and T. Coutts, "Recombination Lifetime of InxGa1-xAs Ternary Alloys", AIP Conference Proceedings 321, (1995), p. 412.

  • H. C. Chou, A. Rohatgi, N. M. Jokerst, S. Kamra, S. R. Stock. S. L. Lowrie, R. K. Ahrenkiel and D. H. Levi, "Approach Toward High Efficiency CdTe/CdS Heterojunction Solar Cells", "Proceedings of the 1994 Electronic Materials Conference, Taiwan, Dec. 1994.

  • R. K. Ahrenkiel, D. Levi, and J. Arch, "Minority-carrier Lifetime Studies of Silicon Spheres", Proceedings of the IEEE Photovoltaics Specialists Conference-1994, pp1368-1371.

  • J. K. Arch, J. S. Reynolds, M. D. Hammerbacher, R. K. Ahrenkiel, S. Asher, K. M, Jones, and M. Al-Jassim, "Characterization of Silicon Spheres for Spheral SolarTM Cells", Proceedings of the IEEE Photovoltaics Specialists Conference-1994, pp. 1364-1367.

  • D. H. Levi, H. R. Moutinho, B. M. Keyes, R. K. Ahrenkiel, M. Al-Jassim, L. L. Kazmerski, and R. Birkmire, "Micro-Thorough Nanostructure Investigations of Polycrystalline CdTe: Correlations with Processing Electronic Structures", Proceedings of the IEEE Photovoltaics Specialists Conference-1994 pp. 127-131.

  • R. Venkatasubramanian, D. P. Malta, M. L. Timmons, J. B. Posthill, J. A. Hutchby, R. K. Ahrenkiel , B. Keyes, and T. Wangensteen, "Material and Device Characterization Toward High-Efficiency GaAs Solar Cells on Optical-Grade Polycrystalline Ge Substrates", Proceedings of the IEEE Photovoltaics Specialists Conference-1994, pp. 1692-1695.

  • R. K. Ahrenkiel, B. M. Keyes, D. H. Levi, K. Emery, T. L. Chu, and S. S. Chu, "The Spatial Uniformity of Minority-carrier Lifetime in Polycrystalline CdTe Solar Cells", Appl. Phys. Lett. 64, 2879 (1994).

  • S. M. Vernon, M. M. Sanfacon and R. K. Ahrenkiel, "Growth of (GaAs)1 x(Ge2)x by Metalorganic Chemical Vapor Deposition", J. Electronic Materials 23, 147 (1994).

  • D. J. Arent, M. Bode, P. Ahrenkiel, R. Ahrenkiel, K. A. Bertness, S. R. Kurtz, C. Kramer, and J. M. Olson, "Growth and characterization of spontaneously ordered AlInAs and GaInAs on InP", SPIE Vol. 2140, p. 68, (1994).

  • R. K. Ahrenkiel, "Minority carrier lifetime of III-V compound semiconductors", in Gallium Arsenide and Related Compounds 1993, IOP Publishing, Bristol, UK ,p. 685 (1994).

  • M. L. Lovejoy, M. R. Melloch, M. S. Lundstrom, B. M. Keyes, and R. K. Ahrenkiel, "Temperature dependence of minority hole mobility in n+-GaAs measured with a new variable temperature technique, J. Electronic Materials 233, 669 (1994).

  • G. Augustine, B. M. Keyes, ,N. M. Jokerst, A. Rohatgi, and R. K. Ahrenkiel, Conference Proceedings Fifth International Conference on Indium Phosphide and Related Materials, p.636, (1993).

  • J. Zhang, B. M. Keyes, S. E. Asher, R. K. Ahrenkiel, and M. L. Timmons, "Giant Recombination Centers in Al0.10Ga0.90As grown by Metalorganic Chemical Vapor Deposition", Appl. Phys. Lett. 63, 1369 (1993).

  • J. Webb, D. J. Dunlavy, T. Ciszek, R. K. Ahrenkiel, M. W. Wanlass, R. Noufi, and S. M. Vernon, "Room-Temperature Measurement of Photoluminescence Spectra of Semiconductors Using an FT-Raman Spectrophotometer", Appl. Spectroscopy 45, 1814 (1993).

  • Y. Rosenwaks, M. C. Hana, D. H. Levi, D. M. Szmyd, R. K. Ahrenkiel, and A. J. Nozik, "Hot-carrier cooling in GaAs: Quantum wells versus bulk", Phys. Rev. B, 48, 14675 (1993).

  • Y. Rosenwaks, B. R. Thacker, R. K. Ahrenkiel, and A. J. Nozik, "Photogenerated Carrier Dynamics Under the Influence of Electric Fields In III-V Semiconductors", Phys. Rev. B, 50, 1746 (1993).

  • A. M. Hermann, R. M. Yandrofski, J. F. Scott, A. Naziripour, David Galt, John C. Price. J. Cuchario, and R. K. Ahrenkiel, "Oxide Superconductors and Ferroelectrics-Materials for a New Generation of TUNABLE Microwave Devices",J. Supercond. 7, 463 (1994).

  • J. D. Webb, D. J. Dunlavy, T. Ciszek, R. K. Ahrenkiel, "Room Temperature Measurement of Photoluminescence Spectra of Semiconductors Using an FT-Raman Spectrophotometer", MRS Symposium Proceedings Vol 324, pp. 233-240, The Society, (1994).

  • B. M. Keyes, D. J. Dunlavy, R. K. Ahrenkiel, G. Shaw, G. P. Summers, N. Tzafaras, and C. Lentz, "Time-Resolved Photoluminescence of Undoped InP", Journ. Appl. Phys. 75, 4249 (1994).

  • R. K. Ahrenkiel, B. M. Keyes, S. M. Durbin, and J. L. Gray, "Recombination Lifetime and Performance of III-V Compound Photovoltaic Devices", 23nd IEEE Photovoltaics Specialists Conference-1993, p. 42.

  • J. Zhang, B. M. Keyes, S. E. Asher, R. K. Ahrenkiel, and M. L. Timmons, "Giant Recombination Centers in Al0.10Ga0.90As grown by Metalorganic Chemical Vapor Deposition", Appl. Phys. Lett. 63, 1369 (1993).

  • S. M. Durbin, J. L. Gray, R. K. Ahrenkiel, and D. H. Levi, "Numerical Modeling of the Influence of Photon Recycling on Lifetime Measurements", 23nd IEEE Photovoltaics Specialists Conference-1993, p. 628.

  • R. K. Ahrenkiel, J. Zhang, B. M. Keyes, S. E. Asher, and M. L. Timmons, "Recombination Effects at Oxygen Related Double Acceptors in Al0.10Ga0.90As", 23nd IEEE Photovoltaics Specialists Conference-1993, p. 712.

  • H. C. Chou, A. Rohatgi, A. K. Bhat, S. Kamra, R. R. Arya, and R. K. Ahrenkiel, "The Effects of Cd/Te Mole Ratio in the MOCVD Growth Ambient on CdTe Solar Cells", 23nd IEEE Photovoltaics Specialists Conference-1993, p. 481.

  • H. R. Moutinho, F. A. Abou-Elfotouh, L. L. Kazmerski, R. K. Ahrenkiel, and D. J. Dunlavy, "Electronic Defect Levels in CuInSe2: Effects of Processing and Junction Formation", 23nd IEEE Photovoltaics Specialists Conference-1993, p. 572.

  • F. A. Abou-Elfotou, H. R. Moutinho, F. S. Hasoon, R. K. Ahrenkiel, B. M. Keyes, and L. L. Kazmerski, "Effects of Precessing on the Properties of Polycrystalline CdTe Grown by Various Deposition Techniques", 23nd IEEE Photovoltaics Specialists Conference-1993, p. 491 .

  • M. S. Lundstrom, M. R. Melloch, G. B. Lush, M. P. Patkar, M. Young, S. M. Durbin, J. L. Gray, H. F. MacMillan, B. M. Keyes, D. H. Levi, and R. K. Ahrenkiel, "Radiative Recombination and Photon Recycling in Gallium Arsenide Solar Cells", AIP Conference Proceedings

  • Hojun Yoon, Kenneth M. Edmondson, Richard R. King, Peter Hebert, Nasser H. Karam, B.T. Cavicchi, and Richard K. Ahrenkiel; "Minority Carrier Lifetime and radiation damage coefficients of Germanium"; (in press). Denver CO, 1992, P. 298.

  • B. M. Keyes, K. A. Emery, and R. K. Ahrenkiel, "Minority-Carrier Lifetime of Compound Semiconductors: Polycrystalline CdTe", AIP Conference Proceedings 268, Denver CO, 1992, p. 149.

  • P. Sheldon, B. M. Keyes, R. K. Ahrenkiel, and S. E. Asher, "Minority carrier lifetimes in molecular beam epitaxy grown AlxGa1-xAs/GaAs double heterostructures doped with aluminum", J. Vac. Sci. Technol. A, 1011 (1993).

  • Y. Rosenwaks, B. R. Thacker, R. K. Ahrenkiel and A. J. Nozik, "Electron Transfer Dynamics at p-GaAs/Liquid Interfaces, J. Phys. Chem. 96, 10096 (1992).

  • H. R. Moutinho, F. S Hasoo, R. K. Ahrenkiel, and D. J. Dunlavy, B. M.Keyes,A. R. Mason, F. A. Abou-Elfotouh, L. L. Kazmerski, and R. W Birkmire "Study of the Process Treatments Used for High-Efficiency, Thin-Film CdTe Solar Cells, Eleventh E. C. Photovoltaic Solar Energy Conference: Proceedings of theInternational Conference-1992, pp. 991-994 Harwood Academic, Langhoren, PA (1993).

  • R. Ahmed-Bitar, H. Moutinho, R. Ahrenkiel, F. Abou-Elfotouh, D. Dunlavy, B. Keyes, R. Matson, A. Mason and L. L. Kazmerski, "Study of the Process Treatments Used for High-Efficiency, Thin-Film CdTe/CdS Solar Cells, Proceeding of the 10th EC Photovoltaic Energy Conference (in press).

  • R. K. Ahrenkiel, B. M. Keyes, L. Wang, and S. P. Albright, "Minority-Carrier Lifetime of Polycrystalline CdTe in CdS/CdTe Solar Cells", 22nd IEEE Photovoltaics Specialists Conference-1991, p. 940.

  • G. B. Lush, M. R. Melloch, M. S. Lundstrom,H. F. MacMillan, B. M. Keyes, R. K. Ahrenkiel, "Measurement of Minority Carrier Lifetimes in N-Type GaAs and the Implications for Solar Cells", 22nd IEEE Photovoltaics Specialists Conference-1991, p. 182.

  • R. K. Ahrenkiel, B. M. Keyes, G. B. Lush, M. R. Melloch, M. S. Lundstrom, and H. F. MacMillan, "Minority-Carrier lifetime and Photon Recycling in N-GaAs", J. Vac. Sci. Technol. A 10, 990 (1992).

  • M. L. Lovejoy, (INVITED PAPER), M. R. Melloch, R. K. Ahrenkiel and M. S. Lundstrom, "Measurement considerations for zero-field time-of-flight studies of minority-carrier diffusion in III-V semiconductors', Solid State Electronics 35, 251 (1992).

  • R. K. Ahrenkiel, (INVITED PAPER), "Measurement of minority-carrier lifetime by time-resolved photoluminescence", Solid State Electronics 35, 239 (1992).

  • R. Venkatasubramanian, J. B. Posthill, M. L. Timmons, H. Ehsani, S. K. Ghandhi, B. M. Keyes, and R. K. Ahrenkiel, "Aspects of high minority-carrier lifetime GaAs on Si using a novel SiGe/Ge Buffer", Appl. Phys. Lett. 60, 886 (1992).

  • M. L. Lovejoy, M. R. Melloch, M. S. Lundstrom and R. K. Ahrenkiel, "Comparative study of minority electron properties in p+-GaAs doped with beryllium and carbon", Appl. Phys. Lett. 61, 2683 (1992).

  • G. B. Lush, H. F. MacMillan, B. M. Keyes, M. S. Lundstrom, R. K. Ahrenkiel, and M. R. Melloch, "A Study of Minority-Carrier Lifetime versus Doping in N Type GaAs by Metalorganic Vapor Deposition", J. Appl. Phys. 72, 1436 (1992).

  • J. Zhang, P. Sheldon, and R. K. Ahrenkiel, "A GaAs Hall Probe for Characterizing High Temperature Superconductors", J. Appl. Phys. 63, 2259 (1992).

  • R. K. Ahrenkiel, B. M. Keyes, D. J. Dunlavy, and L. L. Kazmerski, "Improvement of Device Efficiency By Time- ResolvedPhotoluminescence Measurements", Proceeding of the 10th EC Photovoltaic Energy Conference (Kluwer Academic Publishers, The Netherlands), pp. 533-536.

  • G. B. Lush, H. F. MacMillan, B. M. Keys, R. K. Ahrenkiel, M. R. Melloch, and M. S. Lundstrom, "Microsecond lifetimes and low interface recombination velocities in moderately doped n-GaAs thin films", Appl. Phys. Lett. 61, 2440, (1992).

  • M. L. Lovejoy, M. R. Melloch, M. S. Lundstron, B. M. Keyes, and R. K. Ahrenkiel, "Measurement of minority hole zero-field diffusivity in n+-GaAs", Gallium Arsenide and Related Compounds 1991, IOP Bristol UK, p359 (1992).

  • R. K. Ahrenkiel, B. M. Keyes, and D. J. Dunlavy, "Nonlinear Recombination Processes In Photovoltaic Semiconductors", Solar Cells 30, 163 (1991).

  • R. K. Ahrenkiel, B. M. Keyes, and D. J. Dunlavy, "Intensity Dependent Minority-Carrier Lifetime Due To Saturation of Recombination Centers", J. Appl. Phys. 70, 225 (1991).

  • M. L. Lovejoy, B. M. Keyes, M. E. Klausmeier-Brown, M. R. Melloch, R. K. Ahrenkiel, and M. S. Lundstrom, "Zero-Field Time-of-Flight Measurements of Electron Diffusion in p+-GaAs", Jpn. J. Appl. Phys. 30, L125 (1991).

  • R. N. Bhattacharya, P. A. Parilla, A. Mason, L. L. Roybal, R. K. Ahrenkiel, R. Noufi, R. P. Hellmer, J. F. Kwak, and D. S. Ginley, "TlBaCaCuO and YBaCuO Superconductor Thin Films via an Electrdeposition Process", J. Mater. Res. 6, 1389 (1991).

  • R. N. Bhattacharya, P. A. Parilla, L. L. Roybal, A. Mason, A. Swartzlander, R. K. Ahrenkiel, and R. Noufi, "YBaCuO, PbBiSrCaCuO, and TlBaCaCuO Superconductor Thin Films via an Electrodepostiion Process", TMS Proceedings, High Temperature Superconducting Compounds III, 169, 1991.

  • R. K. Ahrenkiel, B. M. Leues. T. C. Shen, J. I. Chyi and H. Morkoc, "Minority-Carrier Lifetime in AlxGa1 xAs Grown by Molecular Beam Epitaxy", J. Appl. Physics 69, 3094 (1991).

  • M. M. Al-Jassim, R. K. Ahrenkiel, J. M. Olson, and S. M Vernon, "The Heteroepitaxy and Characterization Of InP and GaInP On Silicon For Solar Cell Applications", Mat. Res. Soc. Symp. Proc. 198, 235 (1990).

  • R. N. Bhattacharya, R. Noufi, L. L. Roybal, R. K. Ahrenkiel. P. Parilla, A. Mason and D. Albin, "Superconductor Thin Films Via An Electrodeposition Process", Science and Technology Of Thin Film Superconcductors- 1990, 2, 243 (1991).

  • S. M. Vernon, S. P. Tobin, M. M. Al-Jassim, R. K. Ahrenkiel, K. M. Jones, and B. M. Keyes, "Experimental Study Of Solar Cell Performance Versus Dislocation Density", 21st IEEE Photovoltaics Specialists Conference-1990, p. 211.

  • R. K. Ahrenkiel, D. J. Dunlavy, B. M. Keyes, S. M. Vernon, S. P. Tobin, and T. M. Dixon, "Design of High Efficiency GaAs Solar Cells by Photoluminescence Studies", 21st IEEE Photovoltaics Specialists Conference-1990, p. 432.

  • R. Venkatasubramanian, M. L. Timmons, J. B. Posthill, B. M. Keyes, and R. K. Ahrenkiel, "High Quality GaAs on Si using SiGe/Ge buffer layers", Journ. of Crystal Growth 107, 489 (1990)

  • R. N. Bhattacharya, R. Noufi, L. L. Roybal and R. K. Ahrenkiel, "Y-Ba-Cu-O Superconductor Thin Films Via An Electrodeposition Process", J. Electrochem. Soc. 138, 1643 (1991).

  • M. M. Al-Jassim, R. K. Ahrenkiel, S. M. Vernon, K. M. Jones, and B. M. Keyes, "The Characterization Of InP Layers Grown on Si Substrates By MOCVD", (submitted for publication).

  • T. R. Hanak, R. K. Ahrenkiel, and M. L. Timmons, "The Capture Barrier and the Ionization Entropy of the DX Center in Se-doped AlxGa1 xAs", J. Appl. Phys. 69, 1425 (1991).

  • M. L. Timmons, T. S. Colpitts, R. Venkatasubramaiian, B. M. Keyes, D. J. Dunlavy, and R. K. Ahrenkiel, "Measurement Of AlGaAs/AlGaAs Interface Recombination Velocities Using Time-Resolved Photoluminescence", Appl. Phys. Lett. 56,1850(1990).

  • B. M. Keyes, D. J. Dunlavy, R. K. Ahrenkiel, S. E. Asher, L. D. Partain, D. D. Liu, and M. S. Kuryla, "Minority-Carrier Diffusion Length Of p:GaAs Determined By Time-Of-Flight", J. Vac. Sci. Technol. A 8, 2004 (1990).

  • R. K. Ahrenkiel, J. M. Olson, D. J. Dunlavy, B. M. Keyes and A. E. Kibbler,"Recombination Velocity Of The Ga0.5In0.5P/GaAs Interface", J. Vac. Sci. Technol. A 8, 3002 (1990).

  • M. S. Lundstrom, M. E. Klausmeier-Brown, M. R. Melloch, R. K. Ahrenkiel, and B. M. Keyes, "Device-Related Material Properties of Heavily Doped Gallium Arsenide", Solid State Electronics 33, 693 (1990).

  • Thomas R. Hanak, Assem M. Bakry, R. K. Ahrenkiel, and M. L. Timmons, "DX-Center in Se-Doped AlxGa1-xAs", Mater. Res. Soc. Symp. Proc. Vol. 163, 781 (1990).

  • Thomas Hanak ,Richard K. Ahrenkiel, Donald J. Dunlavy, and Assem Bakry, and Michael L. Timmons, "A New Method to Analyze DLTS Transients", J. Appl. Phys. 67, 4126 (1990).

  • R. K. Ahrenkiel, D. J. Dunlavy, B. M. Keyes, S. M. Vernon, T. M. Dixon, S. P. Tobin, K. L. Miller, and R. E. Hayes, "Ultra Long Lifetime Epitaxial GaAs by Photon Recycling", Appl. Phys. Lett. 55, 1088(1989).

  • T. Hanak, A. Bakry, D. J. Dunlavy, F. Abou-Elfotouh, R. K. Ahrenkiel, and M. L. Timmons, "Deep Level Spectroscopy of AlGaAs and CuInSe2", Solar Cells 27, 347(1989).

  • R. K. Ahrenkiel, M. M. Al-Jassim, B. M. Keyes, D. Dunlavy, K. M. Jones, S. M. Vernon, and T. M. Dixon, "Minority-Carrier Lifetime of GaAs on Silicon", J. Electrochem. Soc. 137, 996 (1990)

  • S. M. Vernon, R. K. Ahrenkiel, M. M. Al-Jassim, T. M. Dixon, K. M. Jones, S. P. Tobin, and N. H. Karam, "Improvement of Minority-Carrier Properties of GaAs on Si", Mater. Res. Soc. Symp. Proc. 145, 349(1989).

  • A. J. Nozik,C. A. Parsons, D. J. Dunlavy, B. M. Keyes, , and R. K. Ahrenkiel, "Dependence of Hot Electron Luminescence on Barrier Thickness in GaAs/AlGaAs Superlattices and Multiple Quantum Wells", Solid State Comm. 75, 297 (1990).

  • L. D. Partain, D. D. Liu, M. S. Kuryla, R. K. Ahrenkiel and S. E. Asher, "Diffusion Length and Interface Recombination Velocity Measurement of a GaAs Solar Cell Using Two Emitter Fabrications and Quantum Yield", Solar Cells 28, 223 (1990).

  • J. M. Olson, R. K. Ahrenkiel, D. J. Dunlavy, B. M. Keyes, and A. E. Kibbler, "Ultralow Recombination Velocity in Ga0.5In0.5P/GaAs Heterointerfaces", Appl. Phys. Lett. 55, 1208(1989).

  • R. K. Ahrenkiel, "Measurement of Carrier Concentration in Semiconductors by Capacitance-Voltage", Microelectronic Manufacturing and Testing, December 1988, p. 13.

  • R. K. Ahrenkiel and D. J. Dunlavy, "Minority Carrier Lifetime In AlxGa1 xAs", J. Vac. Sci. Technol. A7, 822(1989).

  • R. K. Ahrenkiel, "Minority Carrier Lifetimes In Compound Semiconductors", Memorias VIII Congreso Nacional de Fisica de Superficies E Interfaces, p. 1(1988).

  • M. Yamaguchi, C. Amano, Y. Itoh, K. Hane, R. K. Ahrenkiel and M. M. Al-Jassim, "Analysis For High-Efficiency GaAs Solar Cells on Si Substrates",Twentieth IEEE Photovoltaics Specialists Conference-1988, 749.

  • M. L. Timmons, J. A. Hutchby, R. K. Ahrenkiel and D. J. Dunlavy, "Minority Carrier Lifetime Measurements In AlGaAs Alloys by Transient Photoluminescence" , Inst. Phys. Conf. Ser. No. 96, "Gallium Arsenide and Related Compounds", 289 (1989).

  • R. K. Ahrenkiel, M. M. Al-Jassim, D. J. Dunlavy, K. M. Jones, S. M. Vernon, S.P. Tobin and V. E. Haven, "Minority Carrier Properties of GaAs on Silicon", Appl. Phys. Lett. 53, 222 (1988).

  • R. K. Ahrenkiel, D. J. Dunlavy, and T. Hanak, "Photoluminescence Lifetime In Heterojunctions, Solar Cells 24,339(1988).

  • Thomas Hanak and R. K. Ahrenkiel, "Measurement Of Electron Diffusion Lengths In ITO/P-InP By Surface Photocurrents", J. Appl. Phys. 64, 3528(1988).

  • R. K. Ahrenkiel, D. J. Dunlavy and T. Hanak, "Minority Carrier lifetime In ITO/InP Heterojunctions", Journ. Appl. Phys. 64, 1916(1988).

  • R. K. Ahrenkiel, D. J. Dunlavy, and M. L. Timmons, "III-V Compound Process Development Using Photoluminescence Lifetime", Twentieth IEEE Photovoltaics Specialists Conference-1988, p. 611.

  • R. K. Ahrenkiel, M. Al-Jassim, D. J. Dunlavy, K. M. Jones, S. M. Vernon, S. P. Tobin, and V. E. Haven, "Minority Carrier Lifetime of GaAs On Silicon",Twentieth IEEE Photovoltaics Specialists Conference-1988, 684.

  • S. M. Vernon, S. P. Tobin, V. E. Haven, C. Bajgar, M. Al-Jassim and R. K. Ahrenkiel, "Efficiency Improvements In GaAs-on-Si Solar Cells", Twentieth IEEE Photovoltaics Specialists Conference-1988, 481.

  • M. L. Timmons, R. K. Ahrenkiel, M. Al-Jassim, and D. J. Dunlavy, "Minority Carrier Lifetime Measurement in GaAs Grown on Sapphire by OMVPE", J. Appl. Phys. 64, 6259 (1988).

  • R. K. Ahrenkiel, D. J. Dunlavy, J. Benner, R. P. Gale, R. W. McCleland, M. M. Gormely, and B. D. King, "Minority Carrier Lifetime In GaAs thin Films", Appl. Phys. Lett. 53, 598(1988).

  • R.K. Ahrenkiel, D.J. Dunlavy, R.Y. Loo and G. S. Kamath, "Minority Carrier Lifetime in n-Al0.38Ga0.62As", Journ. Appl. Phys.63, 5174(1988).

  • R.K. Ahrenkiel, D.J. Dunlavy and H.C. Hamaker, "High speed characterization of photovoltaic devices", Solar Cells 21, 353(1987).

  • R.K. Ahrenkiel, "The influence of junctions on photoluminescence decay in thin films", J. Appl. Phys. 62, 2937(1987).

  • R.K. Ahrenkiel, D. Greenberg, D.J. Dunlavy, T.Hanak, J. Schlupmann, H.C. Hamaker and C.R.Lewis, "Minority carrier properties of 1.93 ev Al0.37Ga0.63As grown by MOCVD", Nineteenth IEEE photovoltaic Devices Specialists Conference-1987, 1180.

  • H.C. Hamaker, J.G.Werthen, C.R.Lewis, H.F.MacMillan, C.W. Ford, G.F.Virshup,R.K. Ahrenkiel,D.L. Greenberg and J. Schlupmann, "Radiation Damage of 1.93 ev Al0.37Ga0.63As and GaAs solar cells grown by metalorgainc chemical vapor deposition", Nineteenth IEEE Photovoltaic Device Specialists Conference-1987, 733.

  • R.K. Ahrenkiel, D.J. Dunlavy, H.C. Hamaker, T.R. Green, C.R. Lewis, R.E. Hayes, and H. Fardi,"Time-of-flight of minority carrier diffusion in AlxGa1-xAs homojunctions", Appl. Phys. Lett. 49,725 (1986).

  • R.J. Matson, R. Noufi, D. Cahen, R.K. Ahrenkiel and R.C. Powell, "EBIC Investigation of junction activity in solar cells", Eighteenth IEEE Photovoltaic Specialist Conference-1985, LAs Vegas, Nevada (IEEE New York; 1985), p.738.

  • R. K. Ahrenkiel, H. Aharoni, R.E. Hayes, and H. Fardi,"Transient current studies of junction activity in solar cells", Eighteenth IEEE Photovoltaic Specialist Conference-1985, LAs Vegas, Nevada(IEEE New York; 1985),p.738.

  • D. Cahen, T.W.Chen, R. Noufi, R. Ahrenkiel, R. Matson, M. Tomkiewicz, and Wu-Mian Shen, "n-CuInSe2 photoelectrochemical cells", Solar Cells 16, 529(1986)

  • R.K. Ahrenkiel, "The effect of deep States on the photovoltaic performance of CdZnS/CuInSe2 thin film devices", Solar Cells 16, 549(1986).

  • R.K. Ahrenkiel, "Characterization of CdZnS/CuInSe2 thin film solar cells", Proceedings SPIE 540,9 (1985).

  • R.K. Ahrenkiel, "Photocapacitance of CdZnS/CuInSe2 thin film heterojunctions", J. Appl. Phys. 59, 181(1986).

  • T.J. Coutts, S. Naseem, and R.K. Ahrenkiel, "Analysis of high efficiency InP/ITO solar cells", Proceedings of the Sixth EC Photovoltaic Solar Energy Conference, London, 1985, pp. 174-178.

  • R.K. Ahrenkiel and D.J. Dunlavy, "The density of states at GaAs/native oxide interfaces", Solid State Electronics 27, 485(1984)

  • R.K. Ahrenkiel and R.J. Matson, "Transit time studies of junction location in thin-film solar cells", Appl. Phys. Letts. 46, 877(1985).

  • R. J. Matson, R. Noufi, R. K. Ahrenkiel, R. C. Powell, and D. Cahen, "EBIC Investigations of oxygen in CdS/CuInSe2 Devices:", Solar Cells 16, 495 (1986).

  • R.K. Ahrenkiel, R.J. Matson, C.P. Osterwald, D.J. Dunlavy, and L.L. Kazmerski, "Minority carrier diffusion and recombination in CdZnS/CuInSe2 solar cells",J. Appl. Phys. 58, 1362(1985)

  • R.K. Ahrenkiel, P. Sheldon, R.E. Hayes, D. Dunlavy and L. Roybal, "Surface compensation of p-InP as observed by capacitance dispersion", Appl. Phys. Lett. 43, 675(1983).

  • L.L. Kazmerski, R.K. Ahrenkiel,R.J. Matson,T.P. Massopust, J.R. Dick, C.R. Osterwald, K.M. Jones, R. A. Mickelsen and W.S. Chen, "Properties of interfaces in CdZnS/CuInSe2 heterojunctions", J. Vac. Sci. Technol. A2, 292(1984)

  • R.J. Matson, O. Jamjoum, , A.D. Buonaquisti, P.E. Russell, L.L. Kazmerski, P. Sheldon, and R.K. Ahrenkiel and , "Metal contacts ot CuInSe2", Solar Cells 11,301(1984).

  • P. J. Ireland, W. Stanchina, O. Jamjoum, J.F. Wager, L.L. Kazmerski, R.K. Ahrenkiel and P.E. Russell, "Surface and interface analysis of GaAs-oxyfluorides", J. Vac. Sci. Technol. A1, 653(1983).

  • P. Sheldon, P.E. Russell, R.K. Ahrenkiel and R.E. Hayes,"P-InP surface modification due to ITO deposition", J. Vac. Sci. Technol. A1, 618(1983).

  • L.L. Kazmerski, P.E. Russell, O. Jamjoum, R. J. Matson, R.K. Ahrenkiel, P. J. Ireland, R. A. Mickelsen, W. Chen and K. Bachmann, "Initial formation and development of CuInSe2 solar cell interfaces", Proc. 16th IEEE Photovoltaic Spec. Conf., San Diego, CA(IEEE, New York; 1983). p. 756.

  • R. K. Ahrenkiel, L. L. Kazmerski, R. J. Matson, C. Osterwald, T. P. Massopust, R. A. Mickelsen and W. S. Chen, "Heterojunction formation in (CdZn)S/CuInSe2 ternary solar cells", Appl. Phys. Lett. 43, 658, (1983).

  • P. Sheldon, R.K. Ahrenkiel, R.E. Hayes, P.E. Russell, L.L. Kazmerski and R.N. Nottenburg,"Junction characteristics of indium tin oxide/indium phosphide solar cells", Proc. 16th IEEE Photovoltaic Spec. Conf., San Diego(IEEE, New York; 1982). p. 1284.

  • P. Sheldon, R.K. Ahrenkiel, R.E. Hayes and P.E. Russell, "Intefactial properties of ITO/InP devices", Appl. Phys. Lett. 41, 727(1982).

  • R.K. Ahrenkiel, L.L. Kazmerski, P.J. Ireland,O. Jamjoum, P.E. Russell, D.Dunlavy, R.S. Wagner, S. Patillo, and T. Jervis. "Reduction of surface states on GaAs by the plasma growth of oxyfluorides", J. Vac. Sci. and Techn. 21,434(1982).

  • R.K. Ahrenkiel, L. L. Kazmerski, O. Jamjoum,P.E. Russell, and P.J. Ireland, "Properties of plasma oxyfluorides grown on GaAs", Thin Solid Films 95,327(1982).

  • P. E. Russell, O. Jamjoum, R.K. Ahrenkiel, L.L. Kazmerski, and R.A. Mickelsen, "Properties of the Mo-CuInSe2 interface", Appl. Phys. Lett. 40,995(1982).

  • R.K. Ahrenkiel, R.S. Wagner, S. Pattillo, D. Dunlavy, T. Jervis, L.L. Kazmerski, and P. J. Ireland, "Reduction of fast surface states on p-type GaAs", Appl. Phys. Lett. 40, 700(1982).

  • D.J. Dunlavy, R.B. Hammond, and R.K. Ahrenkiel,"A scanning microellipsometer for the spatial characterization of thin films", Porceeding of the Los Alamos Conference of Optics 81, SPIE 288,390(1981).

  • R.K. Ahrenkiel, G. Anderson, D. Dunlavy, C. Maggiore, R. B. Hammond, and S. Stotlar, "Laser annealing of native oxides on GaAs", Appl. Phys. Lett. 38,279 (1981).

  • R.K. Ahrenkiel, G. Anderson, D. Dunlavy, C. Maggiore, R.B. Hammond, and S. Stotlar,"KrF-laser annealing of native oxides on GaAs", The Physics of MOS Insulators, (Pergamon Press), p. 212.

  • R.K. Ahrenkiel, D. Dunlavy, and A.J. Sievers, "A new class of saturable absorbers at 10.6 mm based on doped alkali halides", IEEE Journ. of Quantum Electronics, QE-16,225 (1980).

  • R.K. Ahrenkiel, S.J. Thomas, G. Prinz, J. Krebs, and W. Maisch,"Magneto-optical switch for synchronization of CO2 and red laser beams", IEEE Journ. of Quantum Electronics, QE-16,253 (1980).

  • R.K. Ahrenkiel, D. Dunlavy, and A.J. Sievers, "Generation of CO2 pulses by free induction decay in KCL:KReO4", Optics Comm. 32, 503(1980).

  • J.F. Figueria, R.K. Ahrenkiel and D. Dunlavy, "The nonlinear optical properties of the perrhenate ion in KCL", Proceedings of the Los Alamos Conference on Optics-79, SPIE 190,332(1979).

  • R.K. Ahrenkiel, J. F. Figueria, and D. Dunlavy, "Generation of ultrashort CO2 pulsed by free-induction decay in KCL:KReO4", Proceedings of the Los Alamos Conference on Optics-79, SPIE 190, 322(1979).

  • R.K. Ahrenkiel, J.F. Figueria, C.R. Phipps, S. Thomas, and A.J. Sievers,"A new 10.6 m saturable absorber: KCL doped with KReO4", Proceedings of the International Conference on Lasers-78.

  • R.K. Ahrenkiel, F. Moser. T. Coburn, and S.L. Lyu, "Electronic properties of anodic oxides on GaAsP", Thin Solid Films 56, 117(1979).

  • R.K. Ahrenkiel, J.F. Figueria, C. R. Phipps, Jr., D. Dunlavy, S. Thomas, and A.J. Sievers, "A new saturable absorber for the CO2 laser using doped KCL", Appl. Phys. Lett. 33,705(1978).

  • F. Moser, R.K. Ahrenkiel, and B. Burkey, "Photographic speed of solid state arrays", Photo. Science and Engineering 23, 261(1979).

  • R.K. Ahrenkiel, "Properties of CoCr2S4 applicable to Faraday rotation devices", IEEE Trans. on Magnetics, MAG-14, 454(1978).

  • R.K. Ahrenkiel, P. Weiss, D. Watkins, S.K. Gulati, and W.W. Grannemann,"The Faraday effect in Hg1-xCdxTe at CO2 laser wavelengths", J. Appl Phys. 49, 2265(1978).

  • R.K. Ahrenkiel, F. Moser, T. Coburn, and S.L. Lyu, "Low dark-current MOS photodiodes using GaAs0.6P0.4", J. Appl. Phys. 48, 267(1977).

  • R.K. Ahrenkiel, T. J. Coburn, "Magneto-Optic Insulators Utilizing the Optical Activity of Co++(Td),"IEEE Trans of Magnetics 11,1103(1975).

  • R. K. Ahrenkiel, T. J. Coburn, D. Pearlman, E. Carnall, Jr., T. W. Martin, and S. L. Lye, "A New Calss of Room-Temperature Magneto-Optic Insulators: The Cobalt Ferrites, "Magnetism and Magnetic Materials 1974(AIP, 1975).

  • R. K. Ahrenkiel, S. L. Lyu, and T. J. Coburn, "Reflectance-circular dichroism of the magnetic instulaor CoxCd1 xCr2S4", J. Appl. Phys. 46, 894 (1975).

  • S.D. Jacobs, K. J. Teegarden, and R. K. Ahrenkiel, "Faraday Rotation Optical Isolator for 10.6 mm Radiation", App. Optics 13, 2312(1974).

  • T. Coburn, R. Ahrenkiel, E. Carnall, and D. Pearlman, "Optical Storage in Hot-Pressed Ferrimagnetic Spinels", Magnetism and Magnetic Materials-1973, (AIP, 1974).

  • R. K. Ahrenkiel, T. J. Coburn, and E. Carnall, Jr., "Optical Storage in Hot-Pressed Ferrimagnetic Spinels", IEEE Trans. on Mag. 10, 2(1974).

  • R. K. Ahrenkiel and T. J. Coburn, "Hot-Pressed CoCr2S4: a Magneto-Optical Memory Material", Appl. Phys. Lett. 22, 340(1973).

  • R. K. Ahrenkiel, T. H. Lee, S. L. Lyu, and F. Moser, "Giant Magneto-Reflectance of CoCr2S4", Solid State Comm. 12, 1113(1973).

  • R. K. Ahrenkiel and K. J. Teegarden, "Magneto-Reflectance of the First Exciton in KI and RbI", Phys. Stat. Sol. 51, 603 (1972).

  • T. H. Lee, R. M. Gluck, R. K. Ahrenkiel, and T. J. Coburn, "Optical Properties of Semiconducting CuCr2Se4-xBrx", Magnetism and Magnetic Materials-1971(AIP, 1972).

  • R. K. Ahrenkiel, "Modified Kramers-Kronig analysis of Optical Spectra", Journ. Opt. Soc. Amer. 61, 1651(1971).

  • T. J. Coburn, F. Moser, R. K. Ahrenkiel, and K. J. Teegarden, "Infrared Absorption Spectrum and Faraday Rotation of Hot-Pressed CdCr2S4", IEEE Trans on Magnetics 7, 392 (1971).

  • R. K. Ahrenkiel, F. Moser, E. Carnall, T. Martin, D. Pearlman. S. L. Lyu, T. J. Coburn, and T. H. Lee, "Hot-pressed CdCr2S4; an Efficient Magneto-Optic Material", Appl. Phys. Lett. 18, 171 (1971).

  • F. Moser, R. K. Ahrenkiel, E. Carnall, T. Coburn, S. L. Lyu, T. H. Lee, T. Martin, and D. Pearlman, "Optical and Magneto-Optic Properties of Polycrystalline CdCr2S4", Journ. Appl. Phys. 42, 1449(1971).

  • R. K. Ahrenkiel, F. Moser, S. Lyu, and C. R. Pidgeon,"Magnetoreflectance Studies of CdCr2S4 and CdCr2Se4", Journ. Appl. Phys. 42, 1452(1971).

  • R. K. Ahrenkiel, "Studies of the Polaron Mobility in AgBr at High Temperatures", Phys. Rev. 180, 859 (1969).

  • R. K. Ahrenkiel, "Widebandwidth Logarithmnic Amplifier for analyzing Decay Kinetics", Rev. Scientific Instruments 40, 78 (1968).

  • R. K. Ahrenkiel and K. J. Teegarden, "Magnetoreflection Dichroism of the Low Energy Exciton of RbI", Phys. Rev. Lett. 21, 1682(1968).

  • R. K. Ahrenkiel and W. E. Selke, "A simple Glass Immersion Cryostat", Journ. of Scientific Instruments 1, 944(1968).

  • R. K. Ahrenkiel, "Excited State Structure of the I- Center in AgCl", Solid State Comm. 6, 493 (1968).

  • F. Moser, R. K. Ahrenkiel, and S. L. Lyu, "Optical Absorption and Luminescent Emission of the I Center in AgCl", Phys. Rev. 161, 897(1967).

  • R. K. Ahrenkiel, "Radiative Lifetime of Recombination Luminescence in KI", Solid State Comm. 4, 21 (1966).

  • R. K. Ahrenkiel and R. S. Van Heyningen, "Lifetime and Drift Mobility of Holes in AgBr", Phys. Rev. 144, 576(1966).

  • T. Masumi, R. K. Ahrenkiel, and F. C. Brown, "Hall Mobility of Slow Electrons in AgCl and the Effects of Crystal Purity", Phys. Stat. Sol. 11, 163(1964). See also C. Kittel, Introduction Solid State Physics, 3rd ed. (John Wiley and Sons, 1966), p. 371.

  • R. K. Ahrenkiel and F. C. Brown, "Electron Hall Mobility in the Alkali Halides", Phys. Rev. 136, A223 (1964).
 

 

All contents copyright (c) Richard Ahrenkiel unless otherwise specified.